Berlin 2008 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 12: Photovoltaic
HL 12.9: Vortrag
Montag, 25. Februar 2008, 16:00–16:15, EW 202
Invenstigation of the Silicon-Oxide-Platinum interface for photoelectrochemical solar cells — •Thomas Stempel Pereira1, Aggour Mohammed2, Katarzyna Skorupska1, Michael Lublow1, Andres Munoz1, and Hans-Joachim Lewerenz1 — 1Hahn-Meiter-Institut, Devision of Solar Energy, Glienicker Str. 100, 14109 Berlin, Germany — 2Ibn Tofail University, Rabat, Marocco
Photoelectrochemical solarcells on the basis of Si can be fabricated with standart electrochemical methods. However, corrosion of the semiconductor surface leads to a degeneration of such cells. Attemps have been made to passivate the Si surface with an oxide while allowing charge transfer through metal deposits on the surface. Thus efficiencies of more than 10% can be achived. We present experimental results of various preparation methods of anodic oxides on Si. The deposion of Pt nanoemitters on the electrode through pores in the oxide layer is investigated. The interface density of states was examined by capacitance measurements. Low interface density states can be achived by anodic oxidation in phtalate solutions. Model experiments of electrochemically deposited Pt with synchrotron radiation photoelectron spectroscopy show that Si is oxidized during Pt-deposition, thus reducing the influence of metal induced gap states at the interface.