Berlin 2008 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 14: Heterostructures
HL 14.1: Vortrag
Montag, 25. Februar 2008, 09:30–09:45, ER 164
The initial growth stages of MBE Ge films on PrO2(111)/Si(111) support systems — •Alessandro Giussani1, Olaf Seifarth1, Peter Rodenbach1, Hans-Joachim Müssig1, Peter Zaumseil1, Thomas Weisemöller2, Carsten Deiter2, Joachim Wollschläger2, Peter Storck3, and Thomas Schroeder1 — 1IHP-Microelectronics, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany — 2University of Osnabrück, Barbarastrasse 7, 49076 Osnabrück, Germany — 3SILTRONIC AG, Hanns-Seidel-Platz 4, 81737 München, Germany
In the framework of epitaxial GeOI heterostructures on Si for CMOS applications and III-V optoelectronic materials integration on the Si platform, the MBE growth of Ge on PrO2(111)/Si(111) heterostacks was studied by means of RHEED, XPS, UPS, GI-XRD. It was shown that in the first deposition stages a GeO2-like layer forms as a result of the interaction with the PrO2 substrate, namely the diffusion of lattice oxygen from the dielectric to the growing semiconductor deposit. In consequence the PrO2(111) buffer is fully reduced to a cubic Pr2O3(111) structure. As no oxidizing species are available in the process anymore, under continuous Ge evaporation the Ge oxide layer converts to GeO, which sublimates at the deposition conditions. The uncovered cubic Pr2O3(111) surface then provides a thermodynamically stable template for the heteroepitaxial growth of elemental Ge, which occurs according to a Volmer-Weber mode and results after island coalescence in the formation of a flat, single crystalline, untwined Ge(111) film.