Berlin 2008 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 16: Quantum dots and wires: Optical properties I

HL 16.9: Vortrag

Montag, 25. Februar 2008, 16:15–16:30, ER 164

High-fidelity all-electrical preparation of spin-polarized electrons in single InAs quantum dots — •W. Löffler^1,3, J. Müller¹, H. Flügge¹, C. Mauser¹, S. Li^2,3, T. Passow^1,3, P. Aßhoff^1,3, M. Hetterich^1,3, and H. Kalt^1,3 — ¹Institut für Angewandte Physik, Universität Karlsruhe (TH) — ²Institut für Hochfrequenztechnik und Quantenelektronik, Universität Karlsruhe (TH) — ³DFG Center for Functional Nanostructures, CFN, D-76128 Karlsruhe, Germany

Electrical spin-injection devices provide a unique way to prepare spin-polarized electrons in many separated semiconductor quantum-dots at the same time. Using a semimagnetic spin-polarizer like ZnMnSe, the electron spin polarization can easily be prepared to unity. We have shown that these electrons can be injected into InAs quantum dots preserving the polarization. Here, we present recent investigations to enhance the spin-polarization at low magnetic fields and to study the temporal dynamics in these devices. We implemented and optimized the growth of high-quality ZnMnSSe spin-aligner layers and established time-resolved electroluminescence measurements.