Berlin 2008 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 17: Poster I
HL 17.36: Poster
Montag, 25. Februar 2008, 16:30–19:00, Poster D
Homo- and heteroepitaxial growth behavior of upright InAs nanowires on InAs and GaAs substrates — •Jens Bauer1, Volker Gottschalch1, Hendrik Paetzelt1, Gerald Wagner2, and Ulrich Pietsch3 — 1Institut für Anorganische Chemie, Universität Leipzig, Johannesallee 29, D-04103 Leipzig — 2Institut für Kristallographie und Mineralogie, Universität Leipzig, Linnestr. 5, D-04103 Leipzig — 3Festkörperphysik, Universität Siegen, D-57068 Siegen
Semiconductor nanowires (NW) acquire recently attraction because of promising new application fields in electronics and optoelectronic. We applied the vapor-liquid-solid mechanism with gold seeds in combination with low-pressure metal-organic vapor phase epitaxy (LP-MOVPE) to achieve replicable InAs NW growth with high growth rates. Since the initial alloying of the gold seeds with the substrate material plays a deciding role for the inceptive NW growth, InAs free standing nanowires were grown on GaAs(111)B substrate as well as on InAs/GaAs(111)B quasi-substrate. The influence of the MOVPE parameters will be discussed with respect to NW morphology and real-structure. A special focus will be set on the heteroepitaxial InAs NW growth on GaAs substrates. Gracing-incidence x-ray studies and transmission electron microscopy investigations revealed the existence of a thin GaxIn1−xAs graduated alloy layer with embedded crystalline gold alloy particles at the NW substrate interface. The effect of droplet composition on the VLS growth will be presented in a thermodynamic model.