Berlin 2008 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 17: Poster I

HL 17.5: Poster

Montag, 25. Februar 2008, 16:30–19:00, Poster D

Selective growth and treatment of carbon nanotubes on various substrates — •Philipp Zeigermann, Hans Kleemann, Manuela Janietz, Mathias Steglich, and Bernd Schröter — Universität Jena, Institut für Festkörperphysik, Max-Wien-Platz 1, 07743 Jena, Deutschland

A selective growth of carbon nanotubes with particular structural and electronic properties is a prerequisite to utilize them in electronic and sensor devices.

We grow single-wall nonotubes by chemical vapour deposition (CVD) using methane as precursor gas and metallic catalyst films on various substrates like silicon, fused silica and sapphire. Scanning electron microscopy, x-ray photoelectron and raman spectroscopy demonstrate the high purity of these nanotubes. A hydrogen partial pressure can favour the growth of semiconducting nanotubes. A selective effect of hydrogen and methane has also been found in plasma and thermal treatment of nanotubes. /1/ /2/.

We investigate these effects as well as the thermal treatment in vacuum and air to develope strategies to purify, select and functionalize nanotubes as well as to check their stability.

/1/G. Zhang, et al.: Selective Etching of Metallic Carbon Nanotubes by Gas-Phase Reaction Science 314 (2006) 974-977

/2/A. Hassanien, et al.: Selective etching of metallic singlewall carbon nanotubes with hydrogen plasma Nanotechnology 16 (2005) 278-281