Berlin 2008 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 31: Poster II
HL 31.34: Poster
Dienstag, 26. Februar 2008, 16:30–19:00, Poster D
Memory effect in MOS structures containing amorphous or crystalline silicon nanoparticles — •Sebastian Meier1, Rudolf Brüggemann1, Gottfried Heinrich Bauer1, Nicola Nedev2, Emmo Manolov3, Diana Nesheva3, and Zelma Levi3 — 1Institute of physics, Carl von Ossietzky University Oldenburg, D-26111 Oldenburg, Germany — 2Istituto de Ingenieria, Universidad Autonoma de Baja California, Benito Juarez Blvd., s/n, C.P. 21280, Mexicali, Baja California, Mexico — 3Insitute of solid state physics, Bulgarian Academy of Science, 72 Tzarigradsko Chaussee Blvd., 1784 Sofia, Bulgaria
Amorphous and crystalline silicon nanoparticles (Si-NPs) embedded in a SiO2 matrix are fabricated by thermal annealing of Metal/SiO2/SiOx/c-Si structures (x=1.15) at 700∘C or 1000∘C in N2 atmosphere for 30 or 60 minutes. High frequency C-V measurements show that the samples can be charged negatively or positively by applying a positive or negative bias voltage to the gate. A memory effect, due to the Si-NPs in the SiO2 matrix, is observed. The method of measurement with open circuit between two measurements leads to the retention characteristic where the structures retain about 50% of negative charge trapped in Si-NPs for 24 hours. A second method, where the flat-band voltage is applied as bias voltage, shows shorter retention characteristics. There the Si-NPs retain 50% of their charge after 10 hours.