Berlin 2008 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe

HL: Fachverband Halbleiterphysik

HL 31: Poster II

HL 31.7: Poster

Dienstag, 26. Februar 2008, 16:30–19:00, Poster D

Shear deformation and relaxed lattice constant of (Ga,Mn)As layers on GaAs(113)A — •Lukas Dreher, Joachim Daeubler, Michael Glunk, Wladimir Schoch, Wolfgang Limmer, and Rolf Sauer — Institut für Halbleiterphysik, Universität Ulm, D-89069 Ulm, Germany

The shear deformation and the relaxed lattice constant of compressively strained (Ga,Mn)As layers with Mn concentrations of up to 5%, pseudomorphically grown on GaAs(113)A and GaAs(001) substrates by low-temperature molecular-beam epitaxy, have been studied by high resolution X-ray diffraction (HRXRD) measurements. Rocking curves reveal a triclinic distortion of the (113)A layers with a shear direction towards the [001] crystallographic axis, whereas the (001) layers are tetragonally distorted along [001]. The relaxed lattice constants were derived from ω-2Θ scans for the symmetric (113) and (004) Bragg reflections, taking the elastic anisotropy of the cubic system into account. The increase of the lattice constant with Mn content has been found to be smaller for the (113)A layers than for the (001) layers, presumably due to the enhanced amount of excess As in the (113)A layers.