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HL: Fachverband Halbleiterphysik

HL 32: Quantum dots and wires: preparation and characterization I

HL 32.11: Talk

Wednesday, February 27, 2008, 17:00–17:15, ER 270

Electroluminescence of InP-quantum dots in Al_0.20GaInP-barriers — •Wolfgang-Michael Schulz, Robert Roßbach, Björn Jakobi, Michael Wiesner, Michael Jetter, and Peter Michler — Universität Stuttgart, Institut für Halbleiteroptik und Funktionelle Grenzflächen, Allmandring 3, 70569 Stuttgart, Germany

The use of electrically pumped single-photon emitters (SPE) in the red spectral range is of high interest for future quantum information technologies, as modern APDs have their maximum sensitivity in the visible red. With InP-quantum dots (QDs) in AlGaInP-barriers, these wavelengths are quite easily reachable.

On the way to the rather complex structure of such an SPE, one has to carefully adjust the electrooptical properties of the active region.

Within this contribution we present the continuously driven ensemble electroluminescence characteristics of InP-quantum dots embedded in an Al_0.20GaInP-barrier with Al_0.50GaInP-cladding in a pin-LED-structure. With a total confinement energy of around 300 meV for the Quantum dots, it was possible to achieve bright electroluminescence from 5 K up to 320 K. The growth process of the QDs on the Al-containing barriers implies usually a bimodal distribution, which just can be observed in the low temperature electroluminescence-spectra. At higher temperatures the emission of the lower energetic QDs is suppressed.