Berlin 2008 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 32: Quantum dots and wires: preparation and characterization I
HL 32.4: Talk
Wednesday, February 27, 2008, 15:00–15:15, ER 270
Ion implanted GaAs nanowire pn junctions — •Katharina Wegener1, Daniel Stichtenoth1, Carsten Ronning1, Christoph Gutsche2, Werner Prost2, and Franz Josef Tegude2 — 1II. Institute of Physics, University of Göttingen, Germany — 2Solid-State Electronics Department, University of Duisburg-Essen, Germany
Ion beam doping of materials offers advantages in comparison to doping during growth or by diffusion. First, the impurity concentration as well as the lateral and depth distributions of the dopants are precisely controllable, and secondly, almost all elements can be implanted isotope-selective even beyond any solubility limit.
We present studies on ion implanted gallium arsenide (GaAs) nanowire pn junctions. Nominal intrinsic GaAs nanowires were grown by the vapour-liquid-solid mechanism using gold nanoparticles on top of GaAs (100) substrates. Sulphur, being a donor in GaAs, was implanted into the nanowires using different ion energies resulting in a uniform concentration profile. The now n-type doped nanowires were then reinserted into the metal organic vapour phase epitaxy system. After an annealing procedure, the growth of the nanowires was continued under the addition of an acceptor. Finally, the fabricated nanowire pn junctions were shaved from the growth substrate and processed with contacts on top of insulating carrier substrates. First results on the electrical characterization of these structures will be shown.