Berlin 2008 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe
HL: Fachverband Halbleiterphysik
HL 34: Semiconductor Laser
HL 34.12: Vortrag
Mittwoch, 27. Februar 2008, 17:15–17:30, EW 202
What can we learn from passive mode-locking of quantum dot (QD) based two-section semiconductor lasers? — •Stefan Breuer1, Wolfgang Elsäßer1, Mark Hopkinson2, and Michel Krakowski3 — 1Institute of Applied Physics, Darmstadt University of Technology, Schlossgartenstr. 7, D-64289 Darmstadt, Germany — 2Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield, S1 3JD, United Kingdom — 3Alcatel Thales, III-V Lab, Route départementale 128, 91767 Palaiseau, France
The unique properties of QD based semiconductor laser sources in passively mode-locked operation have stimulated comprehensive studies of their picosecond pulsed emission. Towards a better understanding of the mode-locking process, two-section lasers based on dot-in-well (DWELL) layers as active media were closely investigated. Proper mode-locking at the cavity beat frequency was achieved by forward biasing the gain section and reverse biasing the absorber section, respectively. We have performed systematic measurements of the pulsed emission properties focusing on temporal characterisations using both a high-sensitivity intensity autocorrelation technique as well as an optical cross-correlation technique. The results, also from substantial radio-frequency domain investigations and spectral domain characterisations, will be presented. We will address the influence of gain current and reverse bias voltage especially on the evolution of the optical pulse duration, the repetition rate, the spectral width and the pulse-to-pulse timing jitter. This work has been performed within the scope of the European Union funded STREP project NANO UB-SOURCES.