Berlin 2008 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 34: Semiconductor Laser

HL 34.5: Vortrag

Mittwoch, 27. Februar 2008, 15:15–15:30, EW 202

Reliability of red 660 nm AlGaInP-VCSEL — •Marcus Eichfelder, Michael Wiesner, Robert Roßbach, Michael Jetter, and Peter Michler — Universität Stuttgart, Institut für Halbleiteroptik und Funktionelle Grenzflächen, Allmandring 3, D-70569 Stuttgart

Vertical cavity surface-emitting lasers (VCSEL) based on AlGaInP material system have attracted much interest as potential key components for low-cost optical data communication via plastic optical fibres (POF). Therefore, in this talk we discuss the degradation mechanisms of AlGaInP-based red VCSEL as there is only little known about this topic. Our oxide-confined VCSEL have a high optical output power, low threshold current and high-temperature stability. In aging studies the degradation behaviour of VCSEL was investigated. To determine the different aging processes we stressed the devices at high temperatures and at high currents. These measurements gave us a first hint on acceleration factors for life-time testing. These studies show a remarkable progress in reliability of latest VCSEL compared to older ones due to improvements of the VCSEL structure implemented during the last years. These optimized VCSEL were aged for more than 1000 hours and did not show any degradation.

As the degradation mechanisms are still under discussion, we try to exclude the degradation of the active region by time resolved experiments.

In the future the VCSEL cavity is used to serve as resonator for electrically pumped InP-quantum dots.