Berlin 2008 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 36: Poster III

HL 36.16: Poster

Mittwoch, 27. Februar 2008, 16:30–19:00, Poster D

Characterisation of different hole transport materials as used in organic p-i-n solar cells — •Steffen Pfützner¹, Annette Petrich¹, Christine Malbrich³, Dirk Hildebrandt², Maik Koch¹, Moritz Riede¹, Karl Leo¹, and Martin Pfeiffer² — ¹Institut für Angewandte Photophysik, Technische Universität Dresden, 01069 Dresden, Germany, http://www.iapp.de — ²Heliatek GmbH, Liebigstr. 26, 01187 Dresden, Germany — ³Leibniz-Institut für Festkörper- und Werkstoffforschung Dresden, Helmholtzstr. 20, 01069 Dresden, Germany

This work focuses on the replacement of hole transport material MeO-TPD, which has been used so far in organic p-i-n- solar cells despite its has unfavourable behaviour at elevated temperatures. For this reason, different characterisation and investigations of the hole transport materials PV-TPD, PV-TPDoM, Di-NPB and MeO-Spiro-TPD were done, i.e. dopability, hole mobility, absorption, reflection, cyclic voltametry and glass transition temperature were measured. With simplified structures, e.g. m-i-p diodes, and simplified solar cells, consisting of the blue absorbing fullerene C60 as acceptor and the transparent donor material 4P-TPD, further specific material properties were determined.