Berlin 2008 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 44: Quantum dots and wires: preparation and characterization II
HL 44.4: Vortrag
Donnerstag, 28. Februar 2008, 17:30–17:45, EW 201
Transmission Electron Microscopy investigation of self-organized InN nanocolumns — •Henning Schuhmann1, Christian Denker1, Tore Niermann2, Jörg Malindretos1, Angela Rizzi1, and Michael Seibt1 — 1IV. Physikalisches Institut, Georg-August-Universität Göttingen, D-37077 Göttingen, Germany — 2Now at: Institut für Optik und Atomare Physik, Technische Universität Berlin, D-10623 Berlin, Germany
Semiconductor InN Nanocolumns have electronic properties which makes them a promising candidate for novel photovoltaic devices.
Molecular-beam epitaxy (MBE) grown InN on Si(111) forming self organized InN nanocolumns with diameters down to 20 nm and lengths of up to 2 µm. These structures have been investigated by using energy dispersive X-Ray (EDX) scanning transmission electron microscopy showing an oxygen-rich layer coating the InN nanocolumns. High-resolution TEM of the interface between the nanocolumns and the Si substrate indicates the existing of an amorphous interlayer. Conventional techniques have been applied for cross-section TEM specimen preparation, in addition a Dual Beam Focused Ion Beam (FIB) has been used to prepare cross-section and plan-view specimens. The latter allows us to study single nanocolumns along the rod axis projection. This work was supported, within the EU FP6, by the ERANET project ”NanoSci-ERA: NanoScience in the Eropean Research Area”