Berlin 2008 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 49: ZnO: Optical properties
HL 49.3: Vortrag
Donnerstag, 28. Februar 2008, 11:15–11:30, ER 164
Optical and electrical characterization of acceptors implanted into ZnO — •Joachim Dürr1, Daniel Stichtenoth1, Sven Müller1, Carsten Ronning1, Amilcar Bedoya Pinto2, Jörg Malindretos2, Lars Wischmeier3, and Tobias Voss3 — 1II. Institute of Physics, University of Göttingen, Friedrich-Hund-Platz 1, 37077 Göttingen, Germany — 2IV. Institute of Physics, University of Göttingen, Friedrich-Hund-Platz 1, 37077 Göttingen, Germany — 3Institute for Solid State Physics, University of Bremen, Bibliothekstraße 1, 28359 Bremen, Germany
Group I- and V-elements are the most promising candidates for p-type doping of ZnO. We doped ZnO bulk crystals with several of them using ion implantation, because this technique offers several advantages compared to doping during growth, e.g. precise control of the lateral and vertical dopant concentration even beyond solubility limits. After implantation and annealing of the introduced defects, we performed photoluminescence measurements in order to monitor the optical activation of the dopants. We investigated the dependence of acceptor-related features of the spectra on dopant concentration and annealing conditions as well as the temperature dependence. First Hall measurements of acceptor-implanted ZnO will also be presented.