Berlin 2008 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 50: ZnO: Tansport
HL 50.1: Vortrag
Donnerstag, 28. Februar 2008, 14:00–14:15, ER 164
Conductivity of single ZnO Nanorods after Ga-Implantation in a Focused-Ion-Beam System — •Daniel Weissenberger1, Michael Dürrschnabel1, Dagmar Gerthsen1, Fabián Pérez Willard1,2, Anton Reiser3, Günther Prinz3, Martin Feneberg3, Klaus Thonke3, and Rolf Sauer3 — 1Laboratorium für Elektronenmikroskopie, Universität Karlsruhe, D-76128 Karlsruhe, Germany — 2Center for Functional Nanostructures (CFN), Universität Karlsruhe, D-76128 Karlsruhe, Germany — 3Institut für Halbleiterphysik, Universität Ulm, D-89081 Ulm, Germany
Electrical transport measurements on single Ga+-implanted ZnO nanorods are presented in this contribution. The nanorods were grown by the vapor solid liquid technique and electrically contacted using a procedure based on electron-beam lithography. The implantations were carried out in a combined scanning electron microscope/focused-ion-beam system with doses between 1011 and 1017 cm−2. At implantation doses of about 1014 cm−2, a maximum of the resistance is observed, which we attribute to the decrease of carrier mobility due to lattice defects. High-resolution transmission electron microscopy shows that a high density of stacking faults is generated which consist of inserted (0002) planes perpendicular to the current flow. At high implantation doses, a significant reduction of the resistance is observed. Low specific resistivities of about 3x10−3 Ωcm are reached without additional annealing treatment after high-dose implantation [1].
[1] D. Weissenberger et al., Appl. Phys. Lett. 91, 132110 (2007).