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HL: Fachverband Halbleiterphysik
HL 51: Poster IV
HL 51.7: Poster
Thursday, February 28, 2008, 16:30–19:00, Poster D
Studies of linear absorption in weakly disordered semiconductors - Comparison of various approaches — •Noémi Gögh1, Walter Hoyer1, Peter Bozsoki2, Irina Kuznetsova1, Mackillo Kira1, Peter Thomas1, and Stephan W. Koch1 — 1Department of Physics, Philipps Universität, Renthof 5, 35032 Marburg — 2Department of Physics, Lancaster University, LA14YB Lancaster, UK
A one-dimensional model of a disordered semiconductor is treated in k-space and real space. In the k-space approach the 2nd Born approximation for disorder scattering with and without Markov approximation is applied within a correlation expansion. In real space on the basis of a disordered tight-binding model configurational averaging without any further approximation is performed. Characteristic differences are observed and discussed.