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HL: Fachverband Halbleiterphysik
HL 51: Poster IV
HL 51.9: Poster
Thursday, February 28, 2008, 16:30–19:00, Poster D
FTIR and Raman study of AIIBV2 single crystals at low temperatures. — •Konstantin Shportko1,2, Reinhard Rückamp1, Matthias Wuttig1, Yurij Pasechnik2, Vladimir Trukhan3, and Tatiana Haliakevich3 — 1Institute of Physics (IA), RWTH University of Technology Aachen, Germany — 2Dragomanov National Pedagogical University, Kyiv, Ukraine — 3Joint Institute of Solid State and Semiconductor Physics NASB, Minsk, Belarus
AIIBV2 compounds are promising materials for the construction of the new devices for solid state electronics [1]. Presently the data for the dielectric permittivity dispersion of AIIBV2 crystals are still incomplete [2]. FTIR and Raman spectroscopy have been employed to determine the phonon and plasma contribution to the permittivity and to obtain the permittivity model of AIIBV2 single crystals in the far infrared (FIR). IR reflectance and Raman spectra have been measured in the temperature range from 4 to 300 K. The anisotropy of the phonon contribution to the AIIBV2 single crystals dielectric permittivity shows itself in reflection and Raman spectra in the FIR. At low temperature phonon peaks in the both types of the spectra become narrower. Characteristics of the phonon and plasmon modes were obtained in the temperature range from 4 K to 300 K. The temperature dependence of the oscillator parameters has been determined. [1] V.M. Trukhan, A.U. Sheleg, I.V. Fekeshgazi. Photoelectronics. 15 (2004) 13. [2] J. Baran, Yu. A. Pasechnik, K.V. Shportko, M. Trzebitowska-Gusowska, E.F.Venger, Journal of Molecular Structure, 792-793, (2006), 239-242.