Berlin 2008 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 54: Si/Ge
HL 54.10: Vortrag
Freitag, 29. Februar 2008, 13:00–13:15, EW 202
Remote plasma process with independent control of physical and chemical etching of Si / Ge — •Helmut Lochner1, Martin Amberger2, Therese Chabert2, Martin Sterkel3, Walter Hansch3, Markus Reinl1, and Ignaz Eisele1 — 1Universität der Bundeswehr München, Institut für Physik — 2PVA Tepla AG, Feldkirchen — 3TU München
In the fabrication of electrical and mechanical devices there are several possibilities to structure the surface. An established and state of the art technology is dry etching with plasma-activated gases. There are differences in activation and the use of the plasma. The most important difference is either using a chemical effect or a physical effect for etching with advantages and disadvantages in each case. Although there are reactors combining both effects (e.g. reactive ion etching), you cannot separate them absolutely or control them decoupled.
In our experiments the advantages of the cold remote downstream plasma of the silicon star 12M (PVA Tepla AG, with a 2,45 GHz microwave radical generator) with pure chemical etching (fluorine radicals) were investigated. The process was supplemented with a physical etch component which is independent controllable. This concept was realized with an additional electrical field, called "BIAS". The "BIAS" creates and accelerates Ar ions and generates an ion beam towards the surface.
As a result, the etch rates on Si and Ge as well as the aspect ratio increase. Anisotropic etching of silicon can be achieved. Furthermore the etching of other materials like SiC becomes possible.