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Berlin 2008 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 54: Si/Ge

Friday, February 29, 2008, 10:30–15:00, EW 202

10:30 HL 54.1 Defect Formation Energies without the Band-Gap Problem: Combining DFT and GW for the Silicon Self-Interstitial — •Patrick Rinke, Anderson Janotti, Chris G. Van de Walle, and Matthias Scheffler
10:45 HL 54.2 Point defects in germanium - theory and experiment — •Sibylle Gemming, Clemens Wündisch, and Matthias Posselt
11:00 HL 54.3 Red-shift in SiNW Raman spectra - influence from thermal properties — •Sevak Khachadorian, Harald Scheel, and Christian Thomsen
11:15 HL 54.4 Atomistic simulation of amorphous germanium — •Alice-Agnes Gabriel and Matthias Posselt
11:30 HL 54.5 Hydrogen passivation of low temperature polycrystalline silicon thin films for electronic applications — •Christian Jaeger, Tobias Antesberger, Michael Scholz, Matthias Bator, and Martin Stutzmann
11:45 HL 54.6 Proton irradiation of germanium isotope multilayer structures — •Sebastian Schneider, Hartmut Bracht, Martin Petersen, John Lundsgaard Hansen, and Arne Nylandsted Larsen
12:00 HL 54.7 Structural and electronic properties of ultra-thin polycrystalline Si layers on glass prepared by aluminum-induced layer exchange — •Tobias Antesberger, Christian Jäger, Michael Scholz, Chiara Cordioli, and Martin Stutzmann
12:15 HL 54.8 Oxidation and graphitization of 6H-SiC (0001)Maxim Eremtchenko, Anita Neumann, Jens Uhlig, Rolf Öttking, Roland J. Koch, Katharina Kloeckner, Thomas Haensel, Syed Imad-Uddin Ahmed, and •Juergen A. Schaefer
  12:30 15 min. break
12:45 HL 54.9 Grain boundary conduction in undoped laser-crystallized polycrystalline silicon-germanium thin films — •Lars-Peter Scheller, Moshe Weizman, Norbert H. Nickel, and B. Yan
13:00 HL 54.10 Remote plasma process with independent control of physical and chemical etching of Si / Ge — •Helmut Lochner, Martin Amberger, Therese Chabert, Martin Sterkel, Walter Hansch, Markus Reinl, and Ignaz Eisele
13:15 HL 54.11 Electrical and optical properties of laser-crystallized polycrystalline silicon-germanium thin films — •Moshe Weizman, Lars-Peter Scheller, Norbert Nickel, and Baojie Yan
13:30 HL 54.12 Diffusion of Si and Ge in SiGe-isotope structures — •Rene Kube, Hartmut Bracht, John Lundsgaard Hansen, and Arne Nylandsted Larsen
13:45 HL 54.13 Dopant-induced states in two-dimensional semiconductors — •Philipp Ebert, Sebastian Landrock, and Knut Urban
14:00 HL 54.14 Phosphorus doping of Si nanocrystals — •Andre R. Stegner, Rui N. Pereira, E. Ulrich Stützel, Hartmut Wiggers, Martin S. Brandt, and Martin Stutzmann
14:15 HL 54.15 Diffusion and defect reactions between donors, carbon and vacancies in germanium — •Hartmut Bracht, Sergej Brotzmann, John Lundsgaard Hansen, and Arne Nylandsted Larsen
14:30 HL 54.16 MBE-growth and characterization of highly P doped delta layers in silicon — •Ulrich Abelein, Peter Iskra, Martin Schlosser, Torsten Sulima, and Ignaz Eisele
14:45 HL 54.17 Einfluss der Dotierung auf die elastischen Eigenschaften von Silizium — •Nicole Santen und Reiner Vianden
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