Berlin 2008 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe

HL: Fachverband Halbleiterphysik

HL 7: II-VI semiconductors

HL 7.3: Vortrag

Montag, 25. Februar 2008, 12:00–12:15, EW 201

Lithographical fabrication of HgTe quantum well structures for spin Hall effect measurements — •Andreas Roth, Moritz Leberecht, Markus König, Christoph Brüne, Hartmut Buhmann, and Laurens W. Molenkamp — Physikalisches Institut, Lehrstuhl für Experimentelle Physik 3, Universität Würzburg, Am Hubland, 97074 Würzburg, Germany

Large Rashba energies and high carrier mobilities make HgTe quantum wells structures an interesting material for spintronics applications. The electric detection of the spin Hall current without an external magnetic field requires structures with a special geometry [1]. Due to the low growth temperature standard nano fabrication processes can not be used. It was necessary to develop specific low temperature lithographic processes. Here we present measurements on structures which are fabricated with different geometries and various contact configurations. The Rashba-coupling strength was controlled separately for injector and detector in a non-local measurement configuration. The results provide an all-electronic detection of spin-currents.
[1] E. M. Hankiewicz et al., Phys. Rev. B 70, 241301(R) (2004).