Berlin 2008 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 9: ZnO: Preparation and characterization I
HL 9.12: Vortrag
Montag, 25. Februar 2008, 18:00–18:15, EW 201
ZnO nanocolumns grown by catalyst-free plasma assisted molecular beam epitaxy — •Thomas Andreas Wassner, Bernhard Laumer, Stefan Maier, Jochen Bruckbauer, Martin Stutzmann, and Martin Eickhoff — Walter Schottky Institut, Technische Universität München, Am Coulombwall 3, 85748 Garching, Germany
ZnO nanocolumns were grown on (11-20)-sapphire by plasma assisted molecular beam epitaxy without the use of a catalyst. The influence of the II-VI ratio and the substrate temperature during growth on the density and shape of the nanocolumns was investigated. The epitaxial relationship was found to be Al2O3[0001]∥ZnO[11-20], as determined by high resolution X-ray diffraction. Transmission electron microscopy images and Raman measurements will be presented in order to discuss the structural quality of the ZnO-nanorods. Optical properties, probed by photoluminescence spectroscopy are compared with those of continuous ZnO epitaxial films.