Berlin 2008 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 9: ZnO: Preparation and characterization I
HL 9.7: Vortrag
Montag, 25. Februar 2008, 16:45–17:00, EW 201
Thermal and flash lamp annealing of nitrogen–implanted ZnO thin films. — •Thomas Lüder1, Christian Czekalla1, Gabriele Benndorf1, Matthias Schmidt2, Wolfgang Anwand2, Gerhard Brauer2, Wolfgang Skorupa2, Manfred Helm2, and Marius Grundmann1 — 1Universität Leipzig, Leipzig, Germany — 2Forschungszentrum Dresden – Rossendorf e.V., Dresden, Germany
pn–junctions in ZnO have already been built by implantation of nitrogen ions. Post–annealing methods are used in order to activate the NO acceptor and reduce defects caused by implantation processes. However out–diffusion of nitrogen during thermal annealing reduces the acceptor concentration and might lead to a loss of p–type conductivity. Recent success in using flash lamp annealing on Fe implanted ZnO single crystals[1] encouraged us to apply this post–annealing method to nitrogen–implanted ZnO thin films grown by pulsed laser deposition on sapphire substrates. The short annealing time of this process should minimize the diffusion of nitrogen.
Our samples have been annealed under three different flash lamp annealing conditions and are compared to thermally annealed samples.
The samples have been investigated by electrical and optical methods. We used low temperature photoluminescence and Raman–spectroscopy to prove the incorporation of nitrogen on oxygen sites. To finally get results of the electrical activity of the NO acceptors, the samples have been examined by current–voltage measurements. [1] K. Potzger et al.: J. Appl. Phys. 101, 033906 (2007).