Berlin 2008 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 9: ZnO: Preparation and characterization I
HL 9.9: Vortrag
Montag, 25. Februar 2008, 17:15–17:30, EW 201
Sputtered Silver Contacs on Zinc Oxide — •A. Lajn, H. von Wenckstern, M. Schmidt, M. Brandt, G. Biehne, H. Hochmuth, M. Lorenz, and M. Grundmann — Universität Leipzig, Semiconductor Physics Group, Institut für ExperimentellePhysik II, Leipzig, Germany
Rectifying metal-semiconductor contacts are an adequate tool for investigating the electrical properties of semiconductors by means of, e.g., current-voltage- (IV) or capacitance-voltage-characterisation (CV) or thermal admittance spectroscopy (TAS). Reactive sputtering of silver in an oxygen atmosphere is a reproducible method to realize contacts on zinc oxide single crystals with excellent rectification properties [1]. In this contribution we investigate the properties of such contacts on hydrothermally grown ZnO bulk single crystals and on ZnO thin films grown by pulsed-laser deposition (PLD). The contacts realized on PLD thin films have a rectification ratio I(1V)/I(-1V) of 106, the typical rectification ratio for contacts on bulk crystals is 105. Both IV and CV characteristics confirm the formation of Schottky contacts. The barrier heights are about 0.9 V and the ideality factors are below 1.3 for thin films and about 1.6 for single crystals. Further the contact properties were investigated by temperature-dependent IV measurements confirmimg the usability of the contacts for semiconductor defect characterisation. As example TAS measurements on various electronic defects are presented.
[1] M. W. Allen, S. M. Durbin and J. B. Metson, Appl. Phys. Lett. 91, 053512 (2007).