Berlin 2008 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe
TT: Fachverband Tiefe Temperaturen
TT 39: Transport: Nanoelectronics II - Spintronics and Magnetotransport
TT 39.1: Hauptvortrag
Freitag, 29. Februar 2008, 10:15–10:45, EB 202
EuO1−x Epitaxially Integrated with Silicon — •Andreas Schmehl1,2, Stefan Thiel2, Christoph Richter2, Ross Ulbricht1, Tassilo Heeg1, Marco Liberati3, Martin Röckerath4, Sebastian Mühlbauer6, Peter Böni6, Yuri Barash5, Jürgen Schubert4, Yves Idzerda3, Jochen Mannhart2, and Darrell G. Schlom1 — 1Pennsylvania State University, University Park, PA, USA — 2Universität Augsburg, Augsburg — 3Montana State University, Bozeman, MT, USA — 4Forschungszentrum Jülich, Jülich — 5Russian Academy of Sciences, Chernogolovka, Russia — 6Technische Universität München, Garching
The ferromagnetic semiconductor EuO is well known for its outstanding magneto-transport and magneto-optical properties, but for decades its instability in air has prevented the thorough exploration of this exciting material. Exploiting oxide MBE and advanced capping techniques, we are now able to epitaxially integrate EuO with a multitude of substrates including silicon and GaN and pattern it using photolithography. Using Andreev reflection spectroscopy, we demonstrate that these films have spin-polarizations exceeding 90%, rendering EuO a very promising candidate to establish spin-selective ohmic contacts to silicon. A novel patterning process, combining in situ ion etching and sputtering, allows for the patterning of the films, paving the way to exploit EuO in semiconductor-based spintronic devices as well as in devices making use of its exceptional magneto-transport and magneto-optical properties.