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O: Fachverband Oberflächenphysik
O 27: Poster Session I (Methods: Scanning probe techniques; Methods: Atomic and electronic structure; Methods: Molecular simulations and statistical mechanics; Oxides and Insulators: Clean surfaces; Oxides and Insulators: Adsorption; Oxides and Insulators: Epitaxy and growth; Semiconductor substrates: Clean surfaces; Semiconductor substrates: Epitaxy and growth; Semiconductor substrates: Adsorption; Nano- optics of metallic and semiconducting nanostructures; Electronic structure; Methods: Electronic structure theory; Methods: other (experimental); Methods: other (theory); Solutions on surfaces; Epitaxial Graphene; Surface oder interface magnetism; Phase transitions; Time-resolved spectroscopies)
O 27.101: Poster
Dienstag, 24. März 2009, 18:30–21:00, P2
How does graphene grow? Easy access to well-ordered graphene monolayers — •Frank Müller1, Hermann Sachdev2, Stefan Hüfner1, Andrew J. Pollard3, Edward W. Perkins3, James C. Russell3, Peter H. Beton3, Stefan Gsell4, Matthias Schreck4, and Bernd Stritzker4 — 1Institut für Experimentalphysik, Universität des Saarlandes, 66041 Saarbrücken, Germany — 2Institut für Anorganische Chemie, Universität des Saarlandes, 66041 Saarbrücken, Germany — 3School of Physics and Astronomy, University of Nottingham, NG7 2RD, UK — 4Institut für Physik, Universität Augsburg, 86135 Augsburg, Germany
In the present study [1], the selective formation of large-scale graphene layers on a Rh-YSZ-Si(111) multilayer substrate by a surface-induced chemical growth mechanism was investigated using low energy electron diffraction (LEED), x-ray photoelectron spectroscopy (XPS), x-ray photoelectron diffraction (XPD) and scanning tunnelling microscopy (STM). It is shown that well-ordered graphene layers can be grown using simple and controllable procedures. In addition, temperature dependent experiments provide insight into the details of the growth mechanisms. A comparison of different precursors shows that a mobile dicarbon species (e.g. C2H2 or C2) acts as a common intermediate for graphene formation. These new approaches offer a scalable approach for the large scale production of high-quality graphene layers on silicon based multilayer substrates.
[1] F. Müller, EU-STREP (Specific Targeted Research Project) NanoMesh, Final Meeting, Orscholz, Germany 2008, in submission