Regensburg 2010 – wissenschaftliches Programm

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DF: Fachverband Dielektrische Festkörper

DF 11: High-k and Low-k Dielectrics I (Joint Session DS/DF)

DF 11.3: Vortrag

Mittwoch, 24. März 2010, 10:00–10:15, H8

Electrically optimized high-κ metal gate MOSFET by specific modification of the band alignment — •Łukasz Starzyk, Massimo Tallarida, and Dieter Schmeißer — Brandenburgische Technische Universität, Angewandte Physik-Sensorik, Konrad-Wachsmann-Allee 17, Cottbus D-03046, Germany

The electrical optimization of metal/oxide/semiconductor gate stacks by specific modification of the band alignment for advanced MOS technology incorporating high dielectric constant (κ) materials is explored. Because of requirements concerning continued scaling of MOSFET transistors, gate oxides and cobalt electrode have been grown successively on Si substrate respectively by means of atomic layer deposition (ALD) and evaporation. The thicknesses of high-κ films were around 2 nm. In case of work function engineering, interfaces’ chemistry plays a fundamental role. We applied synchrotron radiation based x-ray photoelectron spectroscopy (SR XPS) to characterize our samples, which allows step by step in situ investigations. Co 2p, Al 2p, Hf 4f, Si 2p and O 1s core levels spectra were measured and analyzed. From valence band (VB) spectra we determined Schottky barrier height and electronic bands offsets.