Regensburg 2010 – scientific programme

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DF: Fachverband Dielektrische Festkörper

DF 6: Focus Session: High-k and high mobility materials for CMOS

DF 6.2: Topical Talk

Tuesday, March 23, 2010, 10:45–11:10, H11

Advanced CMOS transistor technologies using HKMG and strained Silicon for high performance applications — •Manfred Horstmann — Globalfoundries Dresden

In this paper we present an overview about CMOS transistor technologies for advanced circuit applications. To achieve a *high performance per watt* figure of merit, transistor technology elements like strained Si, aggressive junction scaling and high K metal gate technology need hand-in-hand development with multiple core- and power efficient designs. These techniques have been developed, applied and optimized for 45nm volume manufacturing and are currently in ramp for the 28 & 32nm "Foundry" technology nodes at GLOBALFOUNDRIES in Dresden. Different High K metal gate integration schemes and their advantages for different circuit applications will be discussed. An outlook on 22nm technology will be given.