DPG Phi
Verhandlungen
Verhandlungen
DPG

Regensburg 2010 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe

DF: Fachverband Dielektrische Festkörper

DF 6: Focus Session: High-k and high mobility materials for CMOS

Dienstag, 23. März 2010, 10:00–13:10, H11

10:00 DF 6.1 Hauptvortrag: Gate Oxides beyond SiO2 and the High K Materials Revolution — •Darrell Schlom
  10:40 5 min. break
10:45 DF 6.2 Topical Talk: Advanced CMOS transistor technologies using HKMG and strained Silicon for high performance applications — •Manfred Horstmann
11:10 DF 6.3 Topical Talk: Amorphous ternary high-k oxides on Si and higher mobility substrates — •Marcelo Lopes, Eylem Durgun-Ozben, Alexander Nichau, Roman Luptak, Martin Roeckerath, Juergen Schubert, and Siegfried Mantl
11:35 DF 6.4 Hauptvortrag: Aspect Ratio Trapping: A Heterointegration Solution for Ge and III-V CMOS — •James Fiorenza
  12:15 5 min. break
12:20 DF 6.5 Topical Talk: Wafer Bonding Techniques for Advanced CMOS — •Manfred Reiche
12:45 DF 6.6 Topical Talk: Si wafer engineering: single crystalline oxides as buffers for the integration of alternative semiconductors — •Alessandro Giussani, Peter Zaumseil, Olaf Seifarth, Markus Andreas Schubert, Peter Storck, and Thomas Schroeder
100% | Mobil-Ansicht | English Version | Kontakt/Impressum/Datenschutz
DPG-Physik > DPG-Verhandlungen > 2010 > Regensburg