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DPG

Regensburg 2010 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 39: Layer Deposition Processes & Layer Growth

Donnerstag, 25. März 2010, 17:00–18:00, H8

17:00 DS 39.1 Twin assisted growth of silicon on glass from low temperature solution and the onset of a morphological instability — •Robert Heimburger, Thomas Teubner, Nils Deßmann, Torsten Boeck, and Roberto Fornari
17:15 DS 39.2 Atomic layer deposition of HfO2 onto SiO2 substrates investigated in-situ by non-contact UHV/AFM — •Krzysztof Kolanek, Konstantin Karavaev, Massimo Tallarida, and Dieter Schmeisser
17:30 DS 39.3 Epitaxial growth of FeAl films on Al2O3 by pulsed laser deposition — •Moritz Trautvetter, Ulf Wiedwald, and Paul Ziemann
17:45 DS 39.4 Modeling of the relaxation kinetics of metastable tensile strained Si:C alloys — •Felix Ulomek, Ina Ostermay, Thorsten Kammler, and Volker Mohles
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DPG-Physik > DPG-Verhandlungen > 2010 > Regensburg