Regensburg 2010 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 39: Layer Deposition Processes & Layer Growth
DS 39.4: Vortrag
Donnerstag, 25. März 2010, 17:45–18:00, H8
Modeling of the relaxation kinetics of metastable tensile strained Si:C alloys — •Felix Ulomek1, Ina Ostermay2, Thorsten Kammler3, and Volker Mohles1 — 1Institut für Metallkunde und Metallphysik, RWTH Aachen — 2Fraunhofer-Center Nanoelektronische Technologien, Königsbrücker Straße 180, D-01099 Dresden — 3GLOBALFOUNDRIES Dresden Module One LLC & Co. KG, Wilschdorfer Landstraße 101, 01109 Dresden
In order to enhance the performance of CMOS transistors, embedded epitaxial layers of Si:C can be used. In the present work, Si:C layers with Carbon contents up to 1.9 at-% and in-situ Phosphorus doping up to 4× 1020 At/cm3 have been investigated. Due to the low solubility of Carbon in Silicon (0.0004 at.-% at the melting point), all layers considered in this work are metastable and tend to relax. Since it is crucial to the application to retain the strain of those layers, the responsible mechanisms must be understood. The relaxation during thermal treatment was studied by high resolution X-ray diffraction and was found to behave differently, depending on Carbon content and Phosphorus doping concentration. In this work, we propose a relaxation mechanism based on a kick-out reaction of substitutional Carbon which is accelerated by Phosphorus content through transient enhanced diffusion. We simulate the time evolution of layer relaxation as a function of alloying content, layer thickness and temperature. Parameters for the reaction kinetics are obtained by fitting to the experimental data.