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14:00 |
HL 11.1 |
Quantized magnetic confinement in quantum wires — •Mihai Cerchez, Alexey Tarasov, Stefan Hugger, Hengyi Xu, Thomas Heinzel, Igor Zozoulenko, Urszula Gasser-Szerer, Dirk Reuter, and Andreas Wieck
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14:15 |
HL 11.2 |
The effect of gate control on the electrical conductivity of InAs nanowires — •Karl Weis, Christian Volk, Stephan Wirths, Sergio Estévez Hernández, Masashi Akabori, Kamil Sladek, Andreas Penz, Stefan Trellenkamp, Jürgen Schubert, Thomas Schäpers, Hilde Hardtdegen, and Detlev Grützmacher
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14:30 |
HL 11.3 |
The influence of doping on the electronic transport properties of InAs nanowires — •Stephan Wirths, Karl Weis, Christian Volk, Shima Alagha, Masashi Akabori, Kamil Sladek, Stefan Trellenkamp, Hans Lüth, Thomas Schäpers, Hilde Hardtdegen, and Detlev Grützmacher
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14:45 |
HL 11.4 |
Universal and reconfigurable logic gates in a compact three-terminal resonant tunneling diode — •Fabian Hartmann, Lukas Worschech, Tae Yang Kim, and Alfred Forchel
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15:00 |
HL 11.5 |
Fast initialization of dynamic quantum dots — •Philipp Mirovsky, Bernd Kaestner, Christoph Leicht, Klaus Pierz, Thomas Weimann, and Hans Werner Schumacher
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15:15 |
HL 11.6 |
Electromigration in Ag-Nanowires with a Single Grain Boundary — •Simon Sindermann, Christian Witt, Michael Horn-von Hoegen, Günther Dumpich, and Frank-J. Meyer zu Heringdorf
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15:30 |
HL 11.7 |
Boltzmann equation approach to ballistic rectification at a potential step — •Daniel Urban and Jürgen König
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15:45 |
HL 11.8 |
Negative bend resistance in a nanoscale epitaxial graphene cross junction — •Sonja Weingart, Claudia Bock, Ulrich Kunze, Florian Speck, Thomas Seyller, and Lothar Ley
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16:00 |
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15 Min. Coffee Break
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16:15 |
HL 11.9 |
Ballistic quantum spin Hall state of HgTe quantum wells in a strong magnetic field — •Tkachov Grigory and Hankiewicz Ewelina
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16:30 |
HL 11.10 |
Transport Measurements on a GaAs/AlGaAs High Mobility Sample — •Lina Bockhorn, Werner Wegscheider, and Rolf J. Haug
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16:45 |
HL 11.11 |
Transport in dually-gated suspended bilayer graphene devices in electric and magnetic fields — •R. Thomas Weitz, Monica T. Allen, Ben E. Feldman, Jens Martin, and Amir Yacoby
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17:00 |
HL 11.12 |
On the self-consistent calculation of the electric Hall potential — •Tobias Kramer, Christoph Kreisbeck, and Viktor Krueckl
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17:15 |
HL 11.13 |
Activation of acceptor levels in Mn implanted Si by pulsed laser annealing — •Lin Li, Shengqiang Zhou, Danilo Bürger, Peter Oesterlin, Jürgen Fassbender, Manfred Helm, Shude Yao, and Heidemarie Schmidt
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17:30 |
HL 11.14 |
Interaction between quantum dots and a two-dimensional system — •Florian Lau, Gerold Kiesslich, Andreas Marent, Tobias Nowozin, Tobias Brandes, and Dieter Bimberg
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