Regensburg 2010 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 3: Preparation and Characterization

HL 3.1: Vortrag

Montag, 22. März 2010, 10:15–10:30, H14

In situ AFM characterization of e-beam exposed PMMAHans Koop2, •Daniel Schnurbusch1, Michael Müller1, Tobias Gründl1, Markus C. Amann1, Khaled Karrai2, and Alexander W. Holleitner11Walter Schottky Institut und Physik Department, TUM Garching, Germany — 2attocube systems AG, Königinstraße 11a RGB, 80539 München, Germany

PMMA (poly-methyl methacrylate) is a standard polymer used as a resist for high-resolution e-beam lithography. We demonstrate how to probe in-situ the exposure properties of PMMA by an atomic force microscope (AFM). To this end, an AFM is integrated in a scanning electron microscope, and the PMMA is characterized by the AFM after e-beam exposure. Our method allows us to directly image and characterize the exposed areas of the PMMA before the resist is developed. We present a systematic investigation of this novel approach, which may result in a reliable way to evaluate e-beam exposed resists before further post-processing.

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