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Regensburg 2010 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 3: Preparation and Characterization

Montag, 22. März 2010, 10:15–11:45, H14

10:15 HL 3.1 In situ AFM characterization of e-beam exposed PMMAHans Koop, •Daniel Schnurbusch, Michael Müller, Tobias Gründl, Markus C. Amann, Khaled Karrai, and Alexander W. Holleitner
10:30 HL 3.2 Focused ion beam lithography for rapid prototyping of metallic films — •Patrick Osswald, Josef Kiermaier, Markus Becherer, and Doris Schmitt-Landsiedel
10:45 HL 3.3 In situ PES analysis of ultra-thin ZnO layers grown by atomic layer deposition — •Eike Janocha and Christian Pettenkofer
11:00 HL 3.4 In situ characterization of VPE prepared Si(100) surfaces via RAS — •Sebastian Brückner, Henning Döscher, Anja Dobrich, Oliver Supplie, Christian Höhn, and Thomas Hannappel
11:15 HL 3.5 Strain measurements on semiconductors: Raman experi-ments and simulation — •Andreas Talkenberger, Gert Irmer, Martin Abendroth, Christian Röder, and Cameliu Himcinschi
11:30 HL 3.6 High temperature dielectric function of Silicon, Germanium and GaN — •Martin Leyer, Markus Pristovsek, and Michael Kneissl
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