Regensburg 2010 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 3: Preparation and Characterization

HL 3.3: Vortrag

Montag, 22. März 2010, 10:45–11:00, H14

In situ PES analysis of ultra-thin ZnO layers grown by atomic layer deposition — •Eike Janocha and Christian Pettenkofer — Helmholtz-Zentrum Berlin für Materialien und Energie, Hahn-Meitner-Platz 1, 14109 Berlin

Atomic layer deposition (ALD) is known for being a deposition technique allowing the growth of very thin films with excellent thickness and stoichiometry control due to its self-limiting growth characteristics. Zinc oxide (ZnO) layers have been grown by alternating exposure of highly reactive diethylzinc (DEZ) as a metal-precursor and water as oxidizing agent in an UHV environment on Si(111) substrates. After the deposition process, in situ X-ray photoelectron spectroscopy (XPS) and ultraviolet photoelectron spectroscopy (UPS) has been carried out without removing the samples out of the UHV environment. This allows a reliable analysis of the film thickness and interface chemistry and gives us the possibility of determining the temperature regime where the atomic layer deposition process shows its self-limiting character, known as the ALD window. Furthermore, we investigated the initial growth of the ZnO layers on various substrates and we are able to show that there is layer-by-layer growth, characteristic for atomic layer deposition, after formation of the first ZnO monolayer.

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