Regensburg 2010 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 34: Poster I: III-V Semiconductors

HL 34.25: Poster

Dienstag, 23. März 2010, 18:30–20:30, Poster D2

Transport geometry dependence of magnetoresistance behaviour in wurtzite Al_xGa_1−xN/GaN heterostructures — •Andreas Jupe¹, Kirill Trunov¹, Rüdiger Schott¹, Stepan Shvarkov¹, Dirk Reuter¹, Yvon Cordier², and Andreas D. Wieck^1,2 — ¹Ruhr-Universität Bochum, Deutschland — ²Centre de Recherche sur l’Hétéro-Epitaxie et ses Applications, France

The use of a ferromagnetic semiconductor as a spin injector has attracted great interest because of possible applications in spintronics. Gd doped GaN was reported to exhibit ferromagnetism at room temperature and in this contribution, we present magnetotransport measurements at low temperature in Hall bar geometry, which were carried out on Gd doped Al_xGa_1−xN/GaN heterostructures. The doping has been performed by focussed ion beam implantation employing 100 kV Gd⁺⁺⁺ ions with fluences up to 1×10¹² cm⁻² into molecular beam epitaxy grown wurtzite Al_xGa_1−xN/GaN heterostructures, containing a two dimensional electron gas 27 nm below the surface.

The influence of the Hall bar’s in-plane orientation, perpendicular to the [0001] direction on the ferromagnetic signature will be discussed.