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18:30 |
HL 34.1 |
Theoretical Description of optical properties in III-V Semiconductor Nanostructures — •Marc Landmann, Michal Pochwala, Jens Förstner, Torsten Meier, Eva Rauls, and Wolf Gero Schmidt
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18:30 |
HL 34.2 |
In situ characterization of homo- and heteroepitaxial GaP(100) surfaces by reflectance anisotropy spectroscopy — •Sebastian Brückner, Henning Döscher, Oliver Supplie, Anja Dobrich, Peter Kleinschmidt, and Thomas Hannappel
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18:30 |
HL 34.3 |
Structuring the sample surface of MOVPE grown InP QDs on (AlxGa1−x)0.51In0.49P barriers by nanosphere photolithography — •Elisabeth Koroknay, Wolfgang-Michael Schulz, Clemens Wächter, Marcus Eichfelder, Robert Roßbach, Michael Jetter, and Peter Michler
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18:30 |
HL 34.4 |
Entwicklung einer Kohlenstoff-Flüssigmetallionenquelle für die fokussierte Ionenimplantation — •Markus Greff, Paul Mazarov, Dirk Reuter und Andreas D. Wieck
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18:30 |
HL 34.5 |
Low energy focused ion beam implantation on GaAs substrate for the preparation of site selected self-assembled InAs quantum dots — •Yu-Ying Hu and Andreas D. Wieck
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18:30 |
HL 34.6 |
Fabrication of μ-Schottky diode by using molecular beam epitaxy and ion beam lithography — •Asha Bhardwaj, Ashish Rai, Oleg Petracic, Philipp Szary, Hartmut Zabel, Hans-Werner Becker, Dirk Reuter, and Andreas Wieck
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18:30 |
HL 34.7 |
Photo-modulated reflectivity and photocurrent measurements of BxGa1−xAs layers grown by MOVPE — •Thomas Sander, Richard K. Thöt, and Peter J. Klar
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18:30 |
HL 34.8 |
Carbon doped InAlAs/InGaAs/InAs heterostructures — •Marika Hirmer, Imke Gronwald, Dieter Schuh, and Werner Wegscheider
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18:30 |
HL 34.9 |
Gate-controlled zero-magnetic-field spin splitting in the valence band of asymmetric AlGaAs/GaAs Quantum Wells — •Michael Hirmer, Marika Hirmer, Dieter Schuh, Werner Wegscheider, Tobias Korn, and Christian Schüller
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18:30 |
HL 34.10 |
Spin dynamics in high-mobility (110) GaAs based quantum wells — •Roland Völkl, Tobias Korn, Michael Griesbeck, Andreas Maurer, Dieter Schuh, Werner Wegscheider, Sergey Tarasenko, Eugenius Ivchenko, and Christian Schüller
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18:30 |
HL 34.11 |
Temperature dependent investigation of spin dynamics in a Mn-contaminated AlGaAs/GaAs quantum well near an epitaxial GaMnAs layer — •Sebastian Krinner, Michael Griesbeck, Sebastian Fehringer, Robert Schulz, Tobias Korn, Dieter Schuh, Werner Wegscheider, and Christian Schüller
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18:30 |
HL 34.12 |
Spin-injection by resonant tunneling of optically excited carriers — •Stefan Oertel, Jens Hübner, Dieter Schuh, Werner Wegscheider, and Michael Oestreich
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18:30 |
HL 34.13 |
Anisotropic g-factors and isotropic spin lifetimes in reduced symmetry (100) GaAs/AlGaAs quantum wells — •Peter S. Eldridge, J. Hübner, S. Oertel, M. Henini, R. T. Harley, and M. Oestreich
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18:30 |
HL 34.14 |
Spin Injection in GaAs by Cleaved Edge Overgrowth — •Arne Ludwig, Hasmik Harutyunyan, Sani Noor, Mingyuan Li, Henning Soldat, Dirk Reuter, Andreas Wieck, Ulrich Köhler, and Martin Hofmann
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18:30 |
HL 34.15 |
generating InxGa1-xAs quantum dots with low areal density and tailored ground state emission — •ashish rai, dirk reuter, and andreas wieck
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18:30 |
HL 34.16 |
Surface band structure of GaN(0001)-2×2 — Pierre Lorenz, Liverios Lymperakis, Richard Gutt, •Marcel Himmerlich, Juergen A. Schaefer, Jörg Neugebauer, and Stefan Krischok
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18:30 |
HL 34.17 |
Interaction of InN(0001)-(2×2) surfaces with water — •Anja Eisenhardt, Stephanie Reiss, Marcel Himmerlich, Juergen A. Schaefer, and Stefan Krischok
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18:30 |
HL 34.18 |
Comparison of c- and a-plane aluminum nitride by cathodoluminescence and positron annihilation spectroscopy — •Martin von Kurnatowski, Barbara Bastek, Matthias Wieneke, Thomas Hempel, Frank Bertram, Armin Dadgar, Juergen Christen, Alois Krost, Jussi-Matti Mäki, and Filip Tuomisto
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18:30 |
HL 34.19 |
Growth and Doping of AlGaN in MOVPE — •Igor Kuznecov, Joachim Stellmach, Markus Pristovsek, and Michael Kneissl
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18:30 |
HL 34.20 |
Wachstum von Al(1-x)In(x)N mittels Molekularstrahlepitaxie — •Raimund Vöhringer, Dongzhi Hu und Daniel Schaadt
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18:30 |
HL 34.21 |
Winkelkorrelationsuntersuchungen an 172Lu(172Yb) in GaN und AlN und Messung bei tiefen Temperaturen — •Riccardo Valentini, Karl Johnston, Reiner Vianden und Isolde Collaboration
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18:30 |
HL 34.22 |
Formation of Ga2O3 by the oxidation of p-type GaN thin films — •Melanie Pinnisch, Daniel Reppin, Jan Stehr, Andreas Laufer, Detlev M. Hofmann, and Bruno K. Meyer
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18:30 |
HL 34.23 |
Defect and intra-4f luminescence of rare earth doped group-III nitrides synthesized by high pressure high temperature method — Sven Müller, Takashi Taniguchi, •Ulrich Vetter, and Hans Hofsäss
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18:30 |
HL 34.24 |
Optical measurements on Gd doped GaN — •Ole Hitzemann, Martin Kaiser, Enno Malguth, Markus R. Wagner, Jan-H. Schulze, Axel Hoffmann, Shalini Gupta, Tahir Zaidi, Ian T. Ferguson, Martin Röver, Dong-Du Mai, Jörg Malindretos, and Angela Rizzi
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18:30 |
HL 34.25 |
Transport geometry dependence of magnetoresistance behaviour in wurtzite AlxGa1−xN/GaN heterostructures — •Andreas Jupe, Kirill Trunov, Rüdiger Schott, Stepan Shvarkov, Dirk Reuter, Yvon Cordier, and Andreas D. Wieck
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18:30 |
HL 34.26 |
Cathodoluminescence on heteroepitaxial grown a-plane GaN - reduction of the BSF-luminescence — •Martin Noltemeyer, Matthias Wieneke, Thomas Hempel, Armin Dadgar, Jürgen Bläsing, Alois Krost, and Jürgen Christen
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18:30 |
HL 34.27 |
Entstehung selbstorganisierter GaN-Nano-Strukturen durch reaktives Ionenätzen in einer ECR-RIE-Anlage — •Mathias Müller, Thomas Hempel, Bernd Garke, Hartmut Witte, Armin Dadgar, Jürgen Christen und Alois Krost
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18:30 |
HL 34.28 |
Microscopic investigations of the optical and structural properties of nonpolar InGaN MQWs on a-plane GaN ELOG structures — •Torsten Schwarz, Barbara Bastek, Thomas Hempel, Peter Veit, Jürgen Christen, Tim Wernicke, Markus Weyers, and Michael Kneissl
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18:30 |
HL 34.29 |
Morphology and atomic structure of InGaN(0001) surfaces — •Amelie Biermann, Christian Friedrich, Veit Hoffmann, Norbert Esser, Michael Kneissl, and Patrick Vogt
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18:30 |
HL 34.30 |
Semipolar InN grown on m-plane sapphire using MOVPE — •Duc Van Dinh, Markus Pristovsek, and Michael Kneissl
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18:30 |
HL 34.31 |
Influence of growth rate and V/III ratio on the critical layer thickness for relaxation of thick MOVPE grown InGaN layers — •André Kruse, Martin Leyer, Markus Pristovsek, and Michael Kneissl
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18:30 |
HL 34.32 |
Intracavity contacts for nitride based monolithic surface emitters by focused ion beam processing — •Malte Fandrich, Heiko Dartsch, Christian Tessarek, Timo Aschenbrenner, and Detlef Hommel
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18:30 |
HL 34.33 |
Präparation von GaN-basierten Proben mittels Niedrigenergie-Ionendünnung für Transmissionselektronenmikroskopie — •Stephanie Bley, Thorsten Mehrtens und Andreas Rosenauer
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18:30 |
HL 34.34 |
InGaN layers in visible LEDs and solar cells — •Samir Hammadi, Joerg Hisek, Holger Jönen, Uwe Rossow, and Andreas Hangleiter
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18:30 |
HL 34.35 |
Optical gain studies of green emitting GaInN based laser structures — •Moritz Brendel, Alexander Daniel Dräger, Holger Jönen, Uwe Rossow, and Andreas Hangleiter
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18:30 |
HL 34.36 |
Near-field microscopy on GaInN/GaN green light emitting quantum-well structures — •Peter Clodius, Holger Jönen, Lars Hoffmann, Heiko Bremers, Uwe Rossow, and Andreas Hangleiter
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18:30 |
HL 34.37 |
Behaviour of the spontaneous polarisation field in polar and nonpolar GaInN/GaN quantum well structures — •Martina Finke, Holger Jönen, Heiko Bremers, Uwe Rossow, and Andreas Hangleiter
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18:30 |
HL 34.38 |
TEM Investigation of c- and m-plane GaInN/GaN Quantum Well Structures with high Indium Content — •Lars Hoffmann, Heiko Bremers, Holger Jönen, Uwe Rossow, and Andreas Hangleiter
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18:30 |
HL 34.39 |
Characterization of m-plane InGaN multiple quantum wells by x-ray diffraction — •Alexander Schwiegel, Heiko Bremers, Holger Jönen, Uwe Rossow, and Andreas Hangleiter
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