Regensburg 2010 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 34: Poster I: III-V Semiconductors
HL 34.8: Poster
Dienstag, 23. März 2010, 18:30–20:30, Poster D2
Carbon doped InAlAs/InGaAs/InAs heterostructures — •Marika Hirmer1, Imke Gronwald1, Dieter Schuh1, and Werner Wegscheider1, 2 — 1Institut für Experimentelle und Angewandte Physik, Universität Regensburg, D 93040 Regensburg, Germany — 2present address Laboratorium für Festkörperphysik, ETH Zürich, Schafmattstr. 16, 8093 Zürich, Switzerland
InAlAs/InGaAs heterostructures with a high In content are promising candidates for spintronic applications such as spin-valve mesoscopic devices due to their large Landé g-factor (around 15 in InAs) and large Rashba effect.
Here we present results on carbon doped InGaAs/InAlAs heterostructures with embedded InAs channel. Two different types of structure, one with the doping layer in growth direction above the InGaAs/InAs conducting channel (normal structure) and one with the doping layer below the conducting channel (inverted structure) were investigated. As expected, magnetotransport experiments with these samples show no magnetic effects as a similar Mn doped structures [1] but a direction dependent longitudinal resistance. In addition the influence of the thickness of the embedded InAs channel and the influence of the In content on carrier density and on longitudinal resistance were investigated.
[1] U. Wurstbauer, I. Gronwald, U. Stöberl, A. Vogl, D. Schuh, D. Weiss, W. Wegscheider, Physica E 40, 1563 (2008).