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Regensburg 2010 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 36: Ge, GeSi, and Si

Wednesday, March 24, 2010, 09:30–13:00, H14

09:30 HL 36.1 Optical studies of P-, Al-, Ga- and As-doped Ge — •Matthias Allardt, Vladimir Kolkovsky, Paul Clauws, and Jörg Weber
09:45 HL 36.2 Intrinsic and extrinsic diffusion of indium in germanium — •René Kube, Hartmut Bracht, Alexander Chroneos, Matthias Posselt, and Bernd Schmidt
10:00 HL 36.3 The impact of interstitials on diffusion in germanium under proton irradiation — •Sebastian Schneider, Hartmut Bracht, Jan Klug, John Lundsgaard Hansen, Arne Nylandsted Larsen, Eugene Haller, Dominique Bougeard, Matthias Posselt, and Clemens Wündisch
10:15 HL 36.4 Influence of electronic energy deposition on structural modification of SHI irradiated amorphous Ge layers — •Tobias Steinbach, Werner Wesch, Claudia S. Schnohr, Leandro L. Araujo, Raquel Giulian, David J. Sprouster, and Mark C. Ridgway
10:30 HL 36.5 First Principles Study of the Oxide at the Ge-GeO2 Interface — •Jan Felix Binder, Peter Broqvist, and Alfredo Pasquarello
10:45 HL 36.6 Transient optical gain in Germanium quantum wells — •Sangam Chatterjee, Christoph Lange, Niko S. Köster, Martin Schäfer, Mackillo Kira, Stephan W. Koch, Daniel Chrastina, Giovanni Isella, Hans von Känel, and Hans Sigg
  11:00 15 Min. Coffee Break
11:15 HL 36.7 Identification of localized states on Si/SiGe quantum dots by means of ESR — •F. Lipps, F. Pezzoli, M. Stoffel, C. Deneke, J. Thomas, A. Rastelli, V. Kataev, O. G. Schmidt, and B. Büchner
11:30 HL 36.8 Towards efficient Silicon-based light sources using tailored photonic materials — •Norman Hauke, Thomas Zabel, Dominique Bougeard, Gerhard Abstreiter, Yasuhiko Arakawa, and Jonathan Finley
11:45 HL 36.9 Electrically active dopant profiles in individual silicon nanowires — •Pratyush Das Kanungo, Xin Ou, Reinhard Kögler, Peter Werner, Ulrich Gösele, and Wolfgang Skorupa
12:00 HL 36.10 Influence of oxide layer thickness on thermal properties of single silicon nanowires: a Raman study — •Asmus Vierck, Sevak Khachadorian, Janina Maultzsch, and Christian Thomsen
12:15 HL 36.11 Isotope Effect on the Spin Resonance of Boron in Silicon — •Andre R. Stegner, Hiroyuki Tezuka, Till Andlauer, Christoph Pellinger, Kohei M. Itoh, Martin Stutzmann, and Martin S. Brandt
12:30 HL 36.12 A theoretical study of hyperfine parameters in amorphous silicon — •Gernot Pfanner, Christoph Freysoldt, and Jörg Neugebauer
12:45 HL 36.13 Solid-phase crystallization of amorphous silicon films by in-situ postannealing using RPCVD — •Oliver Skibitzki, Yuji Yamamoto, Klaus Köpke, Andreas Schubert, Günter Weidner, Bernd Heinemann, and Bernd Tillack
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