Regensburg 2010 – wissenschaftliches Programm
HL 60.28: Poster
Donnerstag, 25. März 2010, 18:00–20:00, Poster D1
Disorder effects in Ga(AsBi) — •Sebastian Imhof1, Alexej Chernikov2, Sangam Chatterjee2, Xianfeng Lu3, Shane Johnson3, Dan Beaton4, Thomas Tiedje5, Oleg Rubel6, Angela Thränhardt1, and Stephan W. Koch2 — 1Technische Universität Chemnitz, Deutschland — 2Philipps-Universität Marburg, Deutschland — 3Arizona State University, USA — 4University of British Columbia, Kanada — 5University of Victoria, Kanada — 6Lakehead University and Thunder-Bay Regional Research Institute, Kanada
The incorporation of Bi into GaAs reduces the band gap by as much as 60–80 meV per percent Bi. Thus a wide wavelength range in the near and middle infrared region can be reached and Ga(AsBi) is a serious candidate for many applications e.g. diode lasers.
The photoluminesence of the present Ga(AsBi) samples show an S-shape and the PL linewidth has a maximum at intermediate temperatures. These are typical indications of disorder effects on a very large energy scale. We describe the disorder effects using a kinetic Monte-Carlo simulation. In order to characterize the disorder effects we use experimental time-integrated and time-resolved data and compare these to our theoretical results.