Regensburg 2010 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe
MA: Fachverband Magnetismus
MA 10: Poster I
MA 10.72: Poster
Dienstag, 23. März 2010, 10:45–13:45, Poster A
Resistive switching in nanocolumnar manganite thin films structured with e-beam lithography — •Christin Kalkert, Markus Eßeling, Jon-Olaf Krisponeit, Vasily Moshnyaga, Bernd Damaschke, and Konrad Samwer — I. Phys. Institut, Georg-August-Universität Göttingen, Friedrich-Hund-Platz 1, 37077 Göttingen
Manganites show an intriguing variety of different behavior such as the colossal magnetoresistance, the colossal electroresistance and a resisitive switching phenomenon. Changing the resistance as a function of external parameters such as a magnetic or electric field has the potential of creating non-volatile memory applications.
In this work we studied La0.7Sr0.3MnO3 thin films prepared by metal-organic aerosol deposition technique on Al2O3 substrates. The films show columnar nanostructure as determined from X-ray diffraction and TEM measurements. After macroscopic electronic and magnetic characterisation we structured the films to µm-sized bridges by means of electron beam lithography. The current voltage dependances measured at 5 K indicate tunneling mechanism of conductivity and show resistive switching between low and high resistive states. The discussion is based on local structural changes at the grain boundaries.
This work is supported by DFG via SFB 602, TP A2 and the Leibniz Program.
This document was translated from LATEX by HEVEA.