Regensburg 2010 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe
MA: Fachverband Magnetismus
MA 28: Spin-dependent Transport Phenomena
MA 28.1: Vortrag
Donnerstag, 25. März 2010, 15:15–15:30, H3
Magnetic properties and high room temperature TMR ratios of Co2FeAl in magnetic tunnel junctions — •Daniel Ebke, Zoë Kugler, Patrick Thomas, Oliver Schebaum, Markus Schäfers, Dennis Nissen, Jan Schmalhorst, Andreas Hütten, and Andy Thomas — Thin Films and Physics of Nanostructures, Physics Department, Bielefeld University, Germany
Spintronic devices have found a lot of attention in the recent years due to the possible new applications, e.g. a magnetic random access memory (MRAM). Therefore, materials with a high spin polarization such as half metallic Heusler compounds are eligible.
In this work, we present low temperature tunnel magnetoresistance (TMR) values of up to 270% for MgO based magnetic tunnel junctions (MTJs) with Co2FeAl and Co-Fe electrodes. A low temperature dependence leads to high room temperature TMR values of about 150%. The bulk magnetic moment and the element specific magnetic moment at the barrier interface were examined as a function of annealing temperature by alternating gradient magnetometer (AGM) and X-ray absorption spectroscopy (XAS) / X-ray magnetic circular dichroism (XMCD), respectively.