Regensburg 2010 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe
O: Fachverband Oberflächenphysik
O 59: Poster Session II (Nanostructures at surfaces: Dots, particles, clusters; Nanostructures at surfaces: arrays; Nanostructures at surfaces: Wires, tubes; Nanostructures at surfaces: Other; Plasmonics and nanooptics; Metal substrates: Epitaxy and growth; Metal substrates: Solid-liquid interfaces; Metal substrates: Adsoprtion of organic / bio molecules; Metal substrates: Adsoprtion of inorganic molecules; Metal substrates: Adsoprtion of O and/or H; Metal substrates: Clean surfaces; Density functional theory and beyond for real materials)
O 59.11: Poster
Mittwoch, 24. März 2010, 17:45–20:30, Poster B1
Exploration of critical parameters in production of nano structures with Focused Ion Beams — •Stefan Balk1, Lukas Patryarcha1, Karl Bauer1, Axel Rudzinski2, Lars Bruchhaus2, and Heinz Hövel1 — 1TU Dortmund, Experimentelle Physik I — 2Raith GmbH, Dortmund
Surface defects on highly orientated polycrystalline graphite (HOPG) were produced with Focused Ion Beams (FIB) in a pattern of squares with varying ion doses using the ionLiNE FIB-Tool (Raith GmbH). Thereafter the sample was oxidized at 500 ∘C for a duration of 200 minutes with 2% O2. Only defect-rich areas oxidize completely and form nanocavities, which are nanopits deeper than 10 mono layers (ML). The gallium ions have a dose independent maximum penetration depth of about 50 nm at 25 keV. STM and AFM measurements show the existence of a critical ion dose at 20 µ As/cm2 where the transition from nanopit to nanocavity appears. Below 20 µ As/cm2 only a few ML deep nanopits are formed. Above 20 µ As/cm2 nanocavities with an increasing depth up to 50 nm were detected. The results have a good match with TRIM simulations of the produced defect density. The critical defect density is 6,25 · 10−3 defects/Å3. We plan to use these results to realize isolated nano structures of HOPG by treatment of thin films of HOPG on insulator materials.