Regensburg 2010 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 59: Poster Session II (Nanostructures at surfaces: Dots, particles, clusters; Nanostructures at surfaces: arrays; Nanostructures at surfaces: Wires, tubes; Nanostructures at surfaces: Other; Plasmonics and nanooptics; Metal substrates: Epitaxy and growth; Metal substrates: Solid-liquid interfaces; Metal substrates: Adsoprtion of organic / bio molecules; Metal substrates: Adsoprtion of inorganic molecules; Metal substrates: Adsoprtion of O and/or H; Metal substrates: Clean surfaces; Density functional theory and beyond for real materials)
O 59.17: Poster
Mittwoch, 24. März 2010, 17:45–20:30, Poster B1
Micromanipulation of individual InAs nanowires — Kilian Flöhr1, •Marcus Liebmann1, Kamil Sladek2, Hilde Hardtdegen2, Thomas Schäpers2, Detlev Grützmacher2, and Markus Morgenstern1 — 1II. Institute of Physics, RWTH-Aachen University and JARA-FIT, 52074 Aachen, Germany — 2Institute of Bio- und Nanosystems (IBN-1), Jülich Aachen Research Alliance (JARA), Forschungszentrum Jülich, 52425 Jülich, Germany
We investigated methods to manipulate InAs nanowires using micromanipulators, an optical microscope as well as atomic force microscopy with the goal to produce InAs tips for scanning tunneling microscopy. Within the optical microscope, the InAs wires with diameters of approximately 100 nm and length up to 12 µm can be identified as colored stripes (1000 magnification) due to the diffraction of light. The wires, which have been grown by metalorganic vapor phase epitaxy (MOVPE) on a GaAs wafer without catalyst, could be picked up individually using the sharp corner of a doubly cleaved wafer exploiting adhesion forces. Later, the wires are placed onto a desired position at the edge of another wafer. Contacting of the wires is accomplished using indium microsoldering [1], which leads to a two-point resistance down to 1.5 kΩ. First STM measurements, however, did not reveal a tunneling current probably due to oxidation of the tip. Different etching procedures have been tested in order to remove the oxide of the wire.
[1] C. Ö. Girit and A. Zettl, Appl. Phys. Lett. 91, 193512 (2007).