Regensburg 2010 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 59: Poster Session II (Nanostructures at surfaces: Dots, particles, clusters; Nanostructures at surfaces: arrays; Nanostructures at surfaces: Wires, tubes; Nanostructures at surfaces: Other; Plasmonics and nanooptics; Metal substrates: Epitaxy and growth; Metal substrates: Solid-liquid interfaces; Metal substrates: Adsoprtion of organic / bio molecules; Metal substrates: Adsoprtion of inorganic molecules; Metal substrates: Adsoprtion of O and/or H; Metal substrates: Clean surfaces; Density functional theory and beyond for real materials)
O 59.51: Poster
Mittwoch, 24. März 2010, 17:45–20:30, Poster B1
Golden Nanocones for Near-Field Optical Applications — •Christian Schäfer1, Bastian Zeeb1, Peter Nill1, Alexander F. F. Weber-Bargioni2, Stefano Cabrini2, Monika Fleischer1, and Dieter P. Kern1 — 1University of Tübingen, Auf der Morgenstelle 10, 72076 Tübingen — 2Molecular Foundry, 1 Cyclotron Road, Berkeley, CA94720, USA
Manipulating light by means of the enhanced electromagnetic field of metallic nanoparticles has become an interesting and well developed method for microscopic imaging in several branches of study. Through external electromagnetic excitation particle plasmons can be generated, and the resulting field enhancement can be used for near-field imaging as well as for tip enhanced Raman-Spectroscopy. Here two different processes for the fabrication of sharp-tipped golden nanocones are presented. In the first process we use electron beam lithography to structure a layer of hydrogen silsesquioxane (HSQ) coated on a gold surface, which can be evaporated thermally on different kinds of substrates. The structured layer of HSQ is then used as mask in the following Argon-ion etch step which forms the golden nanocones. In this way fields of nanocones with tip radii of less than 10 nanometers can be produced in parallel. In the second method, which is particularly useful for non-planar surfaces, we use electron beam induced deposition to structure an etch mask. For that purpose the precursor tetra-ethyl-ortho silicate is brought next to the gold surface. Silicon oxide is deposited via decomposition by the focused electron beam and serves as etch mask in the following Argon-ion etch step.