Berlin 2012 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 23: Trends in atomic layer deposition II (Focused session – Organizer: Nielsch)
DS 23.4: Vortrag
Mittwoch, 28. März 2012, 19:00–19:15, H 0111
Investigation of Morphology and Resistive Switching in ZrO2/TiO2 Films Grown by Atomic Layer Deposition — •Irina Kärkkänen1, Mikko Heikkilä2, Jaakko Niinistö2, Mikko Ritala2, Markku Leskelä2, and Susanne Hoffmann-Eifert1 — 1Peter Grünberg Institute, Research Center Jülich , 52425 Jülich, Germany — 2Laboratory of Inorganic Chemistry, University of Helsinki, Finland
Thin films from transition metal oxides have become of increasing interest for various applications, especially in high-k and resistive switching devices. In this work, we studied the influence of processing on the structural, morphological and electrical properties of ZrO2 and combination of ZrO2/TiO2 in the form of laminates and bilayers. The films were deposited from Zr(NEtMe)4 (TEMAZ) and Ti(OiPr)4 (TTIP) by atomic layer deposition using ozone or water as the oxygen sources. Deposition temperatures were 200°C, 240°C, and 280°C. The films were characterized with x-ray diffraction, x-ray reflectometry, atomic force microscopy, scanning electron microscopy, and electrical measurements. Differences in structure and electrical properties were found depending on type of oxygen source. Ozone grown ZrO2 films showed an(111) oriented cubic structure, whereas the ones deposited with water were polycrystalline with a cubic/tetragonal mixed phase in thicker films. Resistive switching of metal-insulator-metal structures was scrutinized. Structures like Pt/ZrO2/Ti/Pt, Pt/ZrO/TiO2/Ti/Pt, and Pt/TiO2/ZrO2/Ti/Pt showed different kinds of resistive switching behavior.