Berlin 2012 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 23: Trends in atomic layer deposition II (Focused session – Organizer: Nielsch)

DS 23.6: Vortrag

Mittwoch, 28. März 2012, 19:30–19:45, H 0111

Thermoelectric Characterization of Sb₂Te₃ Thin Films Deposited by ALD — •Sebastian Zastrow¹, Christian Schumacher¹, Matthias Regus², Stephan Schulz³, and Kornelius Nielsch¹ — ¹University of Hamburg — ²University of Kiel — ³University of Duisburg-Essen

Thermoelectric materials can be used as temperature sensors or peltier cooling devices as well as to recover a part of the massive losses of energy due to the waste heat generated in fossil-fuel driven power plants and vehicles. Antimony Telluride (Sb₂Te₃) is a p-doped semiconductor and in the focus of interest for room temperature applications because of its thermoelectric peak performance at around 350 K. However, thermoelectric properties of Sb₂Te₃ ALD thin films have not been reported yet. Based on the work of Pore et al., Sb₂Te₃ is deposited with a home-made reactor on SiO₂ by using (Et₃Si)₂Te and SbCl₃. The surface roughness as well as the growth rate depend strongly on the deposition temperature as reported by Cu et al. To check the preferential growth directions and the composition, XRD and EDX measurements are carried out. The thermoelectric properties are influenced by the deposition parameters. Therefore, spatial scans of the Seebeck coefficient are performed and the electrical resistivity is measured. In order to enhance the thermoelectric performance, a first optimization by short annealing processes is done under helium atmosphere up to 570 K.

The authors would like to thank the "Karl-Vossloh-Stiftung".