|  | 09:30 | DF 21.1 | Ab initio study of defects in SrTiO3 bulk and (100) surfaces — •Ali Al-Zubi, Gustav Bihlmayer, and Stefan Blügel | 
        
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              |  | 09:45 | DF 21.2 | Resistive switching properties in ion beam modified SrTiO3 — •Jura Rensberg, Benjamin Roessler, Christian Katzer, Frank Schmidl, and Carsten Ronning | 
        
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              |  | 10:00 | DF 21.3 | Cation defect engineering in SrTiO3 thin films by PLD with Verification and implication on memristive properties — Sebastian Wicklein, •Chencheng Xu, Alessia Sambri, Salvatore Amoruso, David Keeble, Annemarie Köhl, Werner Egger, and Regina Dittmann | 
        
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              |  | 10:15 | DF 21.4 | Resistive Switching in thermally oxidized Titanium — •Daniel Blaschke, Ilona Skorupa, Bernd Scheumann, Andrea Scholz, Peter Zahn, Sibylle Gemming, Kay Potzger, Agnieszka Bogusz, and Heidemarie Schmidt | 
        
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              |  | 10:30 | DF 21.5 | Non-volatile resistive switching in multiferroic YMnO3 thin films — •Agnieszka Bogusz, Ilona Skorupa, Andrea Scholz, Oliver G. Schmidt, and Heidemarie Schmidt | 
        
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              |  | 10:45 | DF 21.6 | Practical guide for validated memristance measurements — •Nan Du, Yao Shuai, Wenbo Luo, Christian Mayr, Rene Schüffny, Oliver G. Schmidt, and Heidemarie Schmidt | 
        
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            |  | 11:00 |  | Coffee break (15 min) | 
        
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              |  | 11:15 | DF 21.7 | Creating an Oxygen Gradient in Nb2O5 by Argon Irradiation for Resistive Switching Memory — •Helge Wylezich, Hannes Mähne, Daniel Blaschke, Stefan Slesazeck, and Thomas Mikoljiack | 
        
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              |  | 11:30 | DF 21.8 | Multilevel resistive switching in Ar+ irradiated BiFeO3 thin films — •Yao Shuai, Xin Ou, Wenbo Luo, Nan Du, Danilo Bürger, Oliver G. Schmidt, and Heidemarie Schmidt | 
        
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              |  | 11:45 | DF 21.9 | Influence of thickness ratio on resistive switching in BiFeO3:Ti/BiFeO3 bilayer structures — •Tiangui You, Wenbo Luo, Yao Shuai, Nan Du, Danilo Bürger, Ilona Skorupa, Oliver G. Schmidt, and Heidemarie Schmidt | 
        
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              |  | 12:00 | DF 21.10 | Nanoscale resistive switching in epitaxial and polycrystalline BiFeO3 thin films — •Yao Shuai, Wenbo Luo, Chuangui Wu, Wanli Zhang, Oliver G. Schmidt, and Heidemarie Schmidt | 
        
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              |  | 12:15 | DF 21.11 | An electronic implementation of amoeba anticipation — •Mirko Hansen, Karlheinz Ochs, Martin Ziegler, and Hermann Kohlstedt | 
        
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              |  | 12:30 | DF 21.12 | Lattice dynamics in Sb- and Te-based phase-change materials — •Ronnie Ernst Simon, Ilya Sergueev, and Raphaël Pierre Hermann | 
        
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