Regensburg 2013 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
DF: Fachverband Dielektrische Festkörper
DF 21: Resistive Switching (jointly with DF, KR, HL)
DF 21.5: Vortrag
Freitag, 15. März 2013, 10:30–10:45, H32
Non-volatile resistive switching in multiferroic YMnO3 thin films — •Agnieszka Bogusz1,2, Ilona Skorupa1, Andrea Scholz1, Oliver G. Schmidt2,3, and Heidemarie Schmidt2 — 1Institute of Ion Beam Physics and Materials Research, Helmholz-Zentrum Dresden-Rossendorf, 01314 Dresden, Germany — 2Faculty of Electrical Engineering and Information technology, Chemnitz University of Technology, 09107 Chemnitz, Germany — 3Institute for Integrative Nanosciences, IFW-Dresden, 01069 Dresden, Germany
Intensive research on multiferroic materials [1] is driven by the possibility of creating novel, miniaturized tunable multifunctional devices [2]. This work investigates resistive switching behavior of YMnO3 thin films, which can be utilized in new generation memory devices. Series of YMnO3 films were grown by pulsed laser deposition on Si substrates with Pt bottom electrode at temperatures varying between 500°C and 850°C. Characterization of as-grown samples by X-ray diffraction and scanning electron microscopy was followed by determination of electrical properties of films in metal-insulator-metal (MIM) configuration. Results showed that the YMnO3 films grown at 800°C exhibit the best resistive switching properties with high resistance ratio (>10000) of high over low resistance state. Switching mechanism is ascribed to the structural transitions within the film upon applied current.
[1] A. Bogusz et al., Defect Diffus. Forum 323-325, 115 (2012)
[2] Y. Shuai, H. Schmidt et al., J. Appl. Phys. 109, 124117 (2011); J. Appl. Phys. 111, 07D906 (2012)