Regensburg 2013 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 11: Poster Session I: Application of thin films; Ion beam induced surface patterns; Ion and electron beam induced processes; Micro- and nanopatterning (jointly with O)
DS 11.13: Poster
Montag, 11. März 2013, 17:00–20:00, Poster B1
Comparison of low- and room-temperature damage formation in Ar ion implanted GaN and ZnO — •E. Wendler1, W. Wesch1, A. Yu. Azarov2, N. Catarino3, A. Redondo-Cubero3, E. Alves3, and K. Lorenz3 — 1Friedrich-Schiller-Universität Jena, Institut für Festkörperphysik, Max-Wien-Platz 1, D-07743 Jena, Germany — 2University of Oslo, The Department of Physics, P.O. Box 1048 Blindern, NO-0316 Oslo, Norway — 3IST/ITN - Instituto Tecnológico e Nuclear, Instituto Superior Técnico,Universidade Técnica de Lisboa. Estrada Nacional 10, P-2686-953 Sacavém, Portugal
GaN and ZnO are implanted at 15 K and 295 K with 300/200 keV Ar ions. Damage analysis is performed with RBS in channelling configuration quasi-insitu at the respective temperature. The difference in minimum yield is taken as a measure of the amount of damage produced. The most striking result of our work is that in GaN and ZnO the ion-induced damage formation is only weakly influenced by the implantation temperature. For the discussion of our findings, results on damage formation in these materials obtained by other authors applying TEM are taken into account. Eventually it can be concluded that in these materials extended defects form not only at room temperature but also at a temperature of 15 K. This clearly suggests that the formation of extended defects is not driven by the thermal mobility of point defects. It is supposed that in GaN and ZnO damage-induced strain plays a dominant role and the formation of extended defects seems to be energetically favourable in comparison to the formation of larger randomly ordered agglomerates of defects.