Regensburg 2013 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 11: Poster Session I: Application of thin films; Ion beam induced surface patterns; Ion and electron beam induced processes; Micro- and nanopatterning (jointly with O)
DS 11.14: Poster
Montag, 11. März 2013, 17:00–20:00, Poster B1
Binary Pt-Si nanostructures prepared by focused electron-beam-induced deposition: Simulation and experiment — •Marcel Winhold1, Christian H. Schwalb1, Fabrizio Porrati1, Roland Sachser1, Kaliappan Muthukumar2, Harald O. Jeschke2, Roser Valenti2, and Michael Huth1 — 1Physikalisches Institut, Goethe-Universität, Max-von-Laue-Str.1, 60438 Frankfurt am Main — 2Institut für Theoretische Physik, Goethe-Universität, Max-von-Laue Str. 1, 60438 Frankfurt am Main
Binary systems of Pt-Si were prepared by focused electron-beam-induced deposition (FEBID) using the two precursors MeCpPt(Me)3 and Si(SiH3)4 simultaneously. This new approach for the preparation of binary systems with FEBID allows for the variation of the relative flux of the two precursors during deposition. The composites which contain Pt, Si, C and O in different ratios were analyzed by means of energy dispersive X-ray spectroscopy, atomic force microscopy, electrical transport measurements, and transmission electron microscopy. The results show strong evidence for the formation of an amorphous, metastable Pt2Si3 phase, leading to a maximum of the conductivity for a Si:Pt ratio of 3:2.[1] For the stoichiometric proportion of Si:Pt = 3:2 theoretical simulations applying an evolutionary algorithm (USPEX) predict the formation of Pt2Si3 layers separated by graphene-like planes. Micro-Raman measurements will be presented to experimentally study the Pt, Si, C and O structural configuration.
[1] Winhold et al., ACS Nano, 2011, 5 (12), pp 9675-9681